Loading...
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications
ISBN: 978-0-470-51752-9
June 2008
332 pages
The book presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap, and the underlying scientific basis for each application area is described. The book starts with an overview of porous wide-band-gap technology. The coverage includes preparation, characterization, morphology and processing of porous SiC, growth of SiC, preparation and properties of porous GaN, growth of GaN, dislocation mechanism GaN films, electrical properties of porous SiC, magnetism of GaN nanostructures, SiC catalysis technology and nanoporous silicon carbide as a biomembrane for medical use.
This book gives both experts and nonexperts a good overview of porous semiconductors. The book is aimed at researchers intending to pursue work relating to porous wide-band-gap semiconductors in the manufacturing/semiconductor industry. It will also appeal to postgraduate students and researchers in materials science, engineering, chemistry, and nanotechnology.